[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[6p-PA7-12] n-AlGaAsSb and 3-micron range active layer growth on InAs substrate by MOVPE

〇Yuya Yamagata¹, Keita Yoshimoto¹, Yuki Inoue¹, Ryosuke Wakaki¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ of Miyazaki)

Keywords:mid-infrared wavelength, metalorganic vapor phase growth

We aim to realize type-I heterostructure optical device in the mid-infrared wavelength band.In the previous study, the contamination problem of carbon and oxygen during metalorganic vapor phase growth of mixed crystal containing a large amount of Al at low temperature was investigated from the difference of Al material but no improvement of impurities was observed.In this study, we tried triethylantimony as the Sb material, investigated the low impurity content of AlGaAsSb, and grown InAs as an active layer material aimed at 3 μm band light source on the thickened AlGaAsSb and evaluated its optical properties.