Characterization of GaAsN Films with Different N Distribution Grown by Atomic Layer Epitaxy.

Presentation information

Poster presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 6, 2017 1:30 PM - 3:30 PM PA7 (P)

1:30 PM - 3:30 PM

〇Daiki Ueda¹, Yuki Yokoyama¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹ (1.Univ. Miyazaki)

Keywords:Atomic Layer Epitaxy, GaAsN