[6p-PA7-1~16] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[6p-PA7-9] Growth of Interfacially-controlled Heteroepitaxial GaSb Thin Film on GaAs(100) Substrate

〇Takami Ito¹, Hiroki Suzuki¹, Yusuke Watanabe¹, Sachie Fujikawa², Ryuto Machida¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science, 2.Tokyo Denki Univ.)

Keywords:GaSb, MBE, Interfacially-controlled