[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-13] Evaluation of SBD characteristics on lightly-doped p-type GaN layers

〇Hideaki Matsuyama¹, Katsunori Ueno¹, Shinya Takashima¹, Ryou Tanaka¹, Hisashi Yamada², Mitsuaki Shimizu², Masaharu Edo¹ (1.Fuji Electric, 2.AIST)

Keywords:GaN semiconductor, low-concentration p-GaN, Schottky

For the GaN semiconductor the electrical characteristics of the low-concentration p-GaN layer are not sufficiently evaluated. A double Schottky structure in which a high-concentration p-GaN layer was laid under the low-concentration p-GaN layer obtained good SBD characteristics.