[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-14] Proton irradiation effect on long-term reliability of GaN HEMTs

〇Takayuki Hisaka¹, Hajime Sasaki¹, Tomoki Oku¹, Satoshi Hatori², Ryoya Ishigami², Kyo Kume² (1.Mitsubishi Electric Corp., 2.Wakasa Wan Energy Reserch Center)

Keywords:GaN, radiation tolerance, HEMT

GaN HEMTs have been expected for the application of SSPA for space use. However, for use in the radiation environment of space, it is required radiation tolerance of the device. In this study, we investigated proton irradiation effect on long-term reliability of GaN HEMTs. At first, we irradiated proton with 70MeV 2E12/cm² to the devices. After that, we evaluated the characteristics change of the devices during RF life. It was found that the devices with proton irradiation had small Pout reduction of less than 0.2dB after 1000h RF life test. This results show that GaN HEMTs have enough irradiation tolerance in consideration of long-term reliability.