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[6p-PA8-15] Photoinduced Current in n-AlGaAs/GaAs Heterojunction Field-Effect Transistor Driven by Local Illumination in Edge Regions of Schottky Metal Gate
Keywords:semiconductor, Schottky metal gate
We investigated photo-responses of the Schottky gate region of an n-AlGaAs/GaAs
field-effect transistor (FET) by a local illumination with a near-infrared (IR) laser beam.
We examined (1) the Schottky photocurrent JSG from the source to the metal gate and (2)
the lateral photocurrent JSD from the source to the drain in the open gate condition. We
found that the magnitudes of JSG and JSD rapidly increases as the laser spot approaches the
edges of the metal gate; the IR photo-responses are enhanced in the regions near the gate
edges. Experimental findings are well explained by a simple model considering the IR
photo-responses with the gate edge effect.
field-effect transistor (FET) by a local illumination with a near-infrared (IR) laser beam.
We examined (1) the Schottky photocurrent JSG from the source to the metal gate and (2)
the lateral photocurrent JSD from the source to the drain in the open gate condition. We
found that the magnitudes of JSG and JSD rapidly increases as the laser spot approaches the
edges of the metal gate; the IR photo-responses are enhanced in the regions near the gate
edges. Experimental findings are well explained by a simple model considering the IR
photo-responses with the gate edge effect.