[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-17] Stabilization of Nonvolatile Memory Operation Using the Bistability of GaN/AlN Resonant Tunneling Diodes

〇Masanori Nagase¹, Tokio Takahashi¹, Mitsuaki Shimizu¹ (1.AIST)

Keywords:nitride semiconductor, nonvolatile memory, intersubband transition

The stabilization of the nonvolatile memory operation using the bistability of GaN/AlN resonant tunneling diodes (RTDs) was investigated to realize a high-speed nonvolatile memory operating at a picosecond time scale. The number of cycles of write–erase memory operations greater than 30000 and the data retention time above 2 h were attained by the improvement of device structure of GaN/AlN RTDs.