[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-22] Evaluation of lateral diffusion of Mg ion implantation into GaN

〇Ryo Tanaka¹, Shinya Takashima¹, Hideaki Matsuyama¹, Katsunori Ueno¹, Masaharu Edo¹ (1.Fuji Electric)

Keywords:Gallium Nitride, Ion implantation

Vertical type GaN power devices have increased attention. In particular, p-type ion implantation is an important issue. In order to form structures such as JBS-Diode and Guard Rings by ion implantation, it is necessary to evaluate the lateral diffusion. In this report, lateral diffusion of ion implanted Mg into GaN was evaluated by electrical property.
From the forward current density of the device with different width of n-GaN which is the non-implanted region, it was confirmed that the Mg lateral diffusion length is about half of the implantation depth and that no particularly large lateral diffusion occurs.