[6p-PA8-1~31] 13.8 Compound and power electron devices and process technology

[6p-PA8-24] Characterization of plasma-induced defects in GaN by photocapacitance spectroscopy

Kanto Yamasaki¹, Rikito Orimo¹, 〇Seiji Nakamura¹, Tsugunori Okumura¹ (1.Tokyo Metropolitan Univ.)

Keywords:PHCAP, plasma-induced defect