Effects of ALD Condition on Electrical Characterization of Al<sub>2</sub>O<sub>3</sub>/GaN MOS

Presentation information

Poster presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 4:00 PM - 6:00 PM PA8 (P)

4:00 PM - 6:00 PM

〇Sho Sonehara¹, Mutsunori Uenuma¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:Power Device, Atomic layer deposition, Galium nitride