[6p-PB1-1~8] 9.1 Dielectrics, ferroelectrics

▲ [6p-PB1-4] Augmenting the Piezoelectric Response of AlN Thin Films by Using Mg as the Dopant

〇Sri Ayu Anggraini¹, Masato Uehara¹, Hiroshi Yamada¹, Morito Akiyama¹ (1.AIST)

Keywords:piezoelectric, AlN, Mg

A dramatic increase in the piezoelectric property of AlN can be successfully achieved by doping it with scandium (Sc). Although addition of Sc could bring nearly five times greater piezoelectric response, the high cost of using Sc has hindered the wider commercialization of Sc-doped-AlN thin film. This fact has inspired efforts in finding a substitute dopant with a more reasonable cost. Iwasaki et al has conducted first principle calculation to propose a series of Mg-based potential dopants that may give a significant improvement in the piezoelectric response of AlN. The addition of Mg as a single dopant into AlN has been reported to give an adverse effect to the resulting piezoelectric response. However, investigation on the effect of Mg addition on the piezoelectric response in detail has never been reported before. In this study, we fabricated the Mg-doped-AlN thin films and investigated the effect of Mg addition on the piezoelectric response. A small addition of Mg was capable to bring a small enhancement in the piezoelectric response of AlN.