[7a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

[7a-A201-1] Evaluation of Susceptor Coating Film for SiC Epitaxial Reactor Cleaning Using ClF₃ Gas

Kohei Shioda¹, 〇Ryohei Kawasaki¹, Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technologies, 3.Kanto Denka Kogyo)

Keywords:Silicon carbide, Chlorine trifluoride, Cleaning

The fluorination of pyrolytic carbon film was evaluated for the application of the SiC CVD reactor cleaning. At the temperatures less than 480°C, the fluorination was moderate and did not deteriorate the surface morphology.