[7a-A204-1~9] 16.3 Bulk, thin-film and other silicon-based solar cells

[7a-A204-6] Analysis of electric field and current inside crystalline Si photovoltaic module during PID acceleration test

〇Yasushi Tachibana¹, Takeshi Toyoda¹, Toshiharu Minamikawa¹, Yukiko Hara², Atsushi Masuda² (1.IRII, 2.AIST)

Keywords:PID (Potential induced degradation), Analysis, current density

We analyzed the electric field and current inside crystalline Si photovoltaic module when voltage was applied to crystalline Si solar cell for imitating PID. It was found that the current density increases near the cell edge and the electric field strength increases in the EVA around the cell edge. These results mean the possibility that the PID is likely to occur at the cell edge, and expands toward inside.