The 78th JSAP Autumn Meeting, 2017

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7a-A301-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

9:15 AM - 9:30 AM

[7a-A301-2] GaN growth on amorphous substrates with transfer-free graphene buffer layer

〇Hiroshi Kobayashi1, Jitsuo Ohta1,2, Kohei Ueno1, Atsushi Kobayashi1, Hiroshi Fujioka1,3 (1.IIS, The Univ. of Tokyo, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:GaN, graphene, amorphous substrate