[7a-A301-1~11] 15.4 III-V-group nitride crystals

[7a-A301-3] Effects of buffer layer on InN growth on Graphite substrate

〇(M1)Shingo Arakawa¹, Yuuto Kubonaka¹, Kotomi Kuroda¹, Ukyo Ohe¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:Indium Nitride, Graphene, Layered material

We have suggested DERI method and utilization of layered material like graphene as a substrate for high quality InN growth. We have reported nanocrystalline InN was grown on graphite flakes transferred on GaN template. Here, we investigated the effects of buffer layer to improve the wettability of graphite. We found that the coalescence of nano crystal was often confirmed AlN buffer layer.