[7a-A301-1~11] 15.4 III-V-group nitride crystals

[7a-A301-4] Influence of nitrogen radical beam irradiation on RF-MBE growth of InN

〇(M1)Kazuki Watanabe¹, Satoshi Usuda¹, Atsushi Katagiri¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:Indium Nitride, Molecular Beam Epitaxy, Photoluminescence

Migration enhanced epitaxy (MEE) is an attractive method to grow thin InN film because the epitaxial growth proceeds in a layer-by-layer manner even at low temperature. However, unlike GaAs, InN growth needs the group V elements (N) in the active radical state, which might cause irradiation damage in the growth surface. In this study, we investigate influence of nitrogen radical beam irradiation on MBE growth of InN.