[7a-A301-1~11] 15.4 III-V-group nitride crystals

▼ [7a-A301-5] Dislocation reduction in InN film grown with in situ surface reformation by radical beam irradiation

〇(D)Faizulsalihin Bin Abas¹, Ryoichi Fujita¹, Shinichiro Mouri¹, Tsutomu Araki¹, Yasushi Nanishi¹ (1.Ritsumeikan Univ.)

Keywords:indium nitride, threading dislocation, TEM

In this study, in situ surface reformation method by radical beam irradiation was investigated to reduce threading dislocation in InN. From transmission electron microscopy observation, the edge dislocations in InN grown on the N radical beam irradiated InN template bent and merged at several places along the regrowth interface. Furthermore, the threading dislocation density reduces by an order of magnitude in some regrown regions. Possibly, this could be attributed to the surface reformation of InN template by N radical beam irradiation. The results obtained from this study have laid an important platform from which to reduce threading dislocation density in InN film.