Observation of Initial Growth Process in the GaInN Growth on GaN and InN

Tomohiro Yamaguchi; Takuo Sasaki; Masamitsu Takahasi; Takeyoshi Onuma; Tohru Honda; Tsutomu Araki; Yasushi Nanishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7a-A301-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

10:15 AM - 10:30 AM

[7a-A301-6] Observation of Initial Growth Process in the GaInN Growth on GaN and InN

〇Tomohiro Yamaguchi¹, Takuo Sasaki², Masamitsu Takahasi², Takeyoshi Onuma¹, Tohru Honda¹, Tsutomu Araki³, Yasushi Nanishi³ (1.Kogakuin Univ., 2.QST, 3.Ritsumeikan Univ.)

Keywords:GaInN, MBE, in situ measurement

The initial growth process in the GaInN growth on GaN and InN is discussed. The data is obtained in in-situ XRD measurement using synchrotron radiation.