The 78th JSAP Autumn Meeting, 2017

Presentation information

Print

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7a-A301-1~11] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 9:00 AM - 12:00 PM A301 (Main Hall)

Tsutomu Araki(Ritsumeikan Univ.), Jitsuo Ohta(Univ. of Tokyo)

11:15 AM - 11:30 AM

[7a-A301-9] Selective epitaxial growth of doped GaN by pulsed sputtering

〇Kohei Ueno1, Hideyuki Imabeppu1, Atsushi Kobayashi1, Jitsuo Ohta1,2, Hiroshi Fujioka1,3 (1.IIS, UTOKYO, 2.JST-PRESTO, 3.JST-ACCEL)

Keywords:Sputtering, GaN