The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

8 Plasma Electronics » 8.4 Plasma etching

[7a-A402-1~10] 8.4 Plasma etching

Thu. Sep 7, 2017 9:00 AM - 11:45 AM A402 (402+403)

Hisataka Hayashi(TOSHIBA)

9:00 AM - 9:15 AM

[7a-A402-1] Effect of an additive gas on copper dry etching by hydrogen plasma

Hiromasa Ohmi1, Jumpei Sato1, Yusuke Kubota2, Tatsuya Hirano1, Hiroaki Kakiuxhi1, Kiyoshi Yasutake1 (1.Osaka Univ., 2.Tokyo Electron LTD.)

Keywords:hydrogen plasma, copper, etching

高密度水素プラズマによる銅エッチングにおいてN2ガスを添加する効果を議論する。