[7a-A409-1~8] 4.7 Terahertz Photonics

▲ [7a-A409-8] LT-GaAs carrier lifetime evaluation using THz and optical probe techniques at different carrier injection levels

〇(P)JessicaPauline Castillo Afalla¹、Valynn Mag-usara¹、Takeshi Moriyasu²、Hideaki Kitahara¹、Masahiko Tani^1,2 (1.FIR-Univ. Fukui、2.A. Phys. Univ. Fukui)

キーワード：Terahertz, Semiconductor, LT-GaAs

Carrier lifetime measurements on a low temperature grown GaAs layer were done at different carrier injection levels. An optical pump-terahertz probe (OPTP) spectrometer was used for high carrier injection and a double optical pump terahertz time domain emission spectrometer (DOP THz-TDES) was used for much lower carrier injection. The excitation wavelength in both systems was set to 800 nm. Results show fluence dependence on an initial carrier decay attributed to carrier trapping. At low carrier injection, the longer recombination decay became comparable with the initial decay value.