[7a-A414-1~8] 13.9 Optical properties and light-emitting devices

[7a-A414-3] Spin relaxation in S doped InP bulk

〇Masaya Takizawa¹, Daisuke Tanaka¹, Masayuki Iida¹, Shima Tanigawa¹, Atsushi Tackeuchi¹ (1.Waseda Univ.)

Keywords:spin relaxation, pump and probe measurements, S doped InP

In this study, we investigated the carrier relaxation and spin relaxation in S doped InP bulk by time-resolved pump and probe measurement. We also compared the results with those of our previous study done on undoped InP bulk. The carrier relaxation time of S doped InP bulk was 7.10 ps and 137 ps and the spin relaxation time was 18.7 ps in 10 K. It suggests that the Elliot-Yafet mechanism, which is a spin relaxation mechanism involving impurities, is effective.