[7a-A504-1~12] 【CS.6】3.13 & 3.15 Code-sharing session

[7a-A504-4] Multilevel Modulation with III-V/Si MOS Capacitor Mach-Zehnder Modulator

〇Tatsuro Hiraki^1,2, Takuma Aihara¹, Koichi Hasebe¹, Koji Takeda^1,2, Takuro Fujii^1,2, Tai Tsuchizawa^1,2, Takaaki Kakitsuka^1,2, Hiroshi Fukuda^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.NTT Nanophotonics Center)

Keywords:Mach-Zehnder modulator

We fabricated InGaAsP/Si MOS capacitor Mach-Zehnder modulator with VπL of 0.09 Vcm, which is around four times smaller than that of the conventional Si modulator. Using this device, we demonstrated four-level pulse-amplitude modulattion (PAM4) at 10 Gbit/s.