The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[7a-C13-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 7, 2017 9:00 AM - 12:15 PM C13 (office 2-2)

Takashi Suemasu(Univ. of Tsukuba), Kosuke Hara(Univ. of Yamanashi)

9:00 AM - 9:15 AM

[7a-C13-1] [JSAP Young Scientist Award Speech] Novel Transparent Bipolar Oxide Semiconductor: ZrOS

Takeshi Arai1, Soshi Iimura1, Junghwan Kim2, Hideo Hosono1,2 (1.MSL, TIT, 2.MCES, TIT)

Keywords:bipolar, material design, transparent

Transparent bipolar oxide semiconductors have been attractive due to their potential application in transparent electronics. Here, we present the synthesis and physical properties of tetragonal-zirconium oxysulfide (t-ZrOS) with a wide optical forbidden band gap. Fluorine and yettorium doping markedly enhanced the conductivity up to ~10-2 Scm-1, in which a clear sign change of Seebeck coefficient was observed. In this meeting, we report not only t-ZrOS but also new semiconducting material based on other novel concept.