[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[7a-C21-11] Effect of Scanning Velocity on CLC (100) Crystal Growth

〇Nobuo Sasaki^1,2, Yukiharu Uraoka², Muhammad Arif² (1.Sasaki Consulting, 2.NAIST)

Keywords:laser crystallization, crystal texture, thin film transistor

A laser-crystallized Si film having (100) orientation within 10 degrees in more than 99.8% area of the crystallized region has been obtained by CLC. In the previous JSAP meeting, we discussed the effect of the cap interface energy on this phenominon. This paper discusses effects of the beam-spot short-axis size and the scanning velocity. Even with a 5 um short-axis length, the highly (100) oriented film was obtained at the low laser power. The power window to obtain the (100) texture seemed increased with the scanning velocity.