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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Sep 7, 2017 9:00 AM - 12:30 PM C21 (C21)

Takashi Noguchi(Univ. of the Ryukyus), Taizoh Sadoh(Kyushu Univ.)

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9:00 AM - 9:15 AM

[7a-C21-1] Sn Doping Effects on Gold Induced Crystallization of Ge

〇Shunsuke Hatanaka¹, Hongmiao Gao², Takayuki Sugino², Masaya Sasaki², Masanobu Miyao², Taizo Sadoh² (1.Kyushu Univ. EECS, 2.Kyushu Univ. ISEE)

9:15 AM - 9:30 AM

[7a-C21-2] Effects of Film Thickness on Solid-Phase Crystallization of SiSn/Insulator at Low-Temperature

〇Kazuki Yagi¹, Hongmiao Gao², Takayuki Sugino², Masanobu Miyao², Taizo Sadoh² (1.Kyushu Univ. EECS, 2.Kyushu Univ. ISE)

9:30 AM - 9:45 AM

△ [7a-C21-3] Low-temperature synthesis of high hole mobility (380 cm²/Vs) Ge thin films on glass

〇Ryota Yoshimine¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

9:45 AM - 10:00 AM

[7a-C21-4] Effects of Deposition Temperature of Precursors on Solid-Phase Crystallized Si_1−xGe_x Thin Films on an Insulator

〇Daichi Takahara¹, Kaoru Toko¹, Ryota Yoshimine¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

10:00 AM - 10:15 AM

△ [7a-C21-5] Evaluation of Nanostructure in Poly-Si Grain by Raman Spectroscopy (Ⅱ)

〇Takahiro Suzuki¹, Ryo Yokogawa^1,4, Nobuaki Mino¹, Kazuya Takahashi², Katsuhiko Komori², Tamotsu Morimoto³, Naomi Sawamoto¹, Atsushi Ogura¹ (1.Meiji Univ., 2.Tokyo Electron Tohoku Ltd., 3.Tokyo Electron Ltd., 4.JSPS Research Fellow)

10:15 AM - 10:30 AM

[7a-C21-6] Dynamic observation study on the crystallization process of amorphous silicon by means of in situ XRD and TEM

〇Riichiro Takaishi¹, Kiwamu Sakuma¹, Takanori Asano¹, Masumi Saito¹, Hiroki Tanaka¹, Yukiko Daigo², Yutaka Fukushima² (1.Toshiba Corp., 2.Toshiba Nanoanalysis Corp.)

10:30 AM - 10:45 AM

△ [7a-C21-7] Low temperature Si generation by the reduction of SiCl₄ with hydrogen radical

〇Yuji Okamoto^1,2, Daiki Tsutsumi³, Takamasa Ishigaki³, Fatima Zohra Dahmani⁴, Masatomo Sumiya¹ (1.NIMS, 2.Tsukuba Univ., 3.Hosei Univ., 4.USTO-MB)

11:00 AM - 11:15 AM

[7a-C21-8] Thermal Calculation of a-Si Films on Polyimide during Excimer Laser Annealing

〇Tatsuya Okada¹, Futa Gakiya¹, Yuya Ishiki¹, Takashi Noguchi¹ (1.Univ. Ryukyus)

11:15 AM - 11:30 AM

[7a-C21-9] Analyses on Residual Thermal Stress in Thermal-Plasma-Jet Crystallized Amorphous Silicon Films on Flexible Glass Substrate

〇Tatsuki Hieda¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:30 AM - 11:45 AM

[7a-C21-10] High Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Atmospheric Pressure Thermal-Plasma-Jet Irradiation Using Cylindrical Rotation Stage

〇Wataru Nakano¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:45 AM - 12:00 PM

[7a-C21-11] Effect of Scanning Velocity on CLC (100) Crystal Growth

〇Nobuo Sasaki^1,2, Yukiharu Uraoka², Muhammad Arif² (1.Sasaki Consulting, 2.NAIST)

12:00 PM - 12:15 PM

▲ [7a-C21-12] Characterization of (100) Surface Oriented Poly-Si Thin Films with Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

〇(DC)Thuy Thi Nguyen¹, Mitsuhisa Hiraiwa¹, Tomoyuki Koganezawa², Satoshi Yasuno², Shin-Ichiro Kuroki¹ (1.Hiroshima Univ., 2.SPring-8)

12:15 PM - 12:30 PM

[7a-C21-13] The dependence of regrowth rate of a thin amorphous Si layer formed on clean and H-terminated Si surfaces upon interfacial H amounts using medium energy IBIEC

〇Gosuke Yachida¹, Koudai Inoue¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

Session information

[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[7a-C21-1] Sn Doping Effects on Gold Induced Crystallization of Ge

[7a-C21-2] Effects of Film Thickness on Solid-Phase Crystallization of SiSn/Insulator at Low-Temperature

△ [7a-C21-3] Low-temperature synthesis of high hole mobility (380 cm²/Vs) Ge thin films on glass

[7a-C21-4] Effects of Deposition Temperature of Precursors on Solid-Phase Crystallized Si_1−xGe_x Thin Films on an Insulator

△ [7a-C21-5] Evaluation of Nanostructure in Poly-Si Grain by Raman Spectroscopy (Ⅱ)

[7a-C21-6] Dynamic observation study on the crystallization process of amorphous silicon by means of in situ XRD and TEM

△ [7a-C21-7] Low temperature Si generation by the reduction of SiCl₄ with hydrogen radical

[7a-C21-8] Thermal Calculation of a-Si Films on Polyimide during Excimer Laser Annealing

[7a-C21-9] Analyses on Residual Thermal Stress in Thermal-Plasma-Jet Crystallized Amorphous Silicon Films on Flexible Glass Substrate

[7a-C21-10] High Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Atmospheric Pressure Thermal-Plasma-Jet Irradiation Using Cylindrical Rotation Stage

[7a-C21-11] Effect of Scanning Velocity on CLC (100) Crystal Growth

▲ [7a-C21-12] Characterization of (100) Surface Oriented Poly-Si Thin Films with Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

[7a-C21-13] The dependence of regrowth rate of a thin amorphous Si layer formed on clean and H-terminated Si surfaces upon interfacial H amounts using medium energy IBIEC

Authentication

Session information

[7a-C21-1~13] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [7a-C21-3] Low-temperature synthesis of high hole mobility (380 cm2/Vs) Ge thin films on glass

△ [7a-C21-5] Evaluation of Nanostructure in Poly-Si Grain by Raman Spectroscopy (Ⅱ)

△ [7a-C21-7] Low temperature Si generation by the reduction of SiCl4 with hydrogen radical

▲ [7a-C21-12] Characterization of (100) Surface Oriented Poly-Si Thin Films with Multi-Line Beam Continuous-Wave Laser Lateral Crystallization

Authentication

△ [7a-C21-3] Low-temperature synthesis of high hole mobility (380 cm²/Vs) Ge thin films on glass

△ [7a-C21-7] Low temperature Si generation by the reduction of SiCl₄ with hydrogen radical