[7a-PB2-1~24] 12.3 機能材料・萌芽的デバイス

▲ [7a-PB2-2] The effect of domain interface on the photoelectrochemistry of an organic semiconductor heterojunction

〇(D)Ahmad Bin Mohdfairus¹、Toshiyuki Abe²、Keiji Nagai¹ (1.Tokyo Institute of Technology、2.Hirosaki University)

キーワード：Organic semiconductor, Photocatalyst, Probe microscopy

Photocatalyst is an example of utilizing the energy that was converted from light, where the energy is used to accelerate a reaction. Organic semiconductor p/n junction such as 3,4,9,10-perylene -tertacarboxylic-bisbenzimidazole (PTCBI) of n-type semiconductor and phthalocyanine (H₂Pc) of p-type semiconductor behave as a photocatalyst in the water phase under wide visible light region. In this study, PTCBI and H₂Pc were fabricated into three types of bilayer ITO/PTCBI (50 nm)/H₂Pc (150 nm) electrode. Each of them contain the different domain length of H₂Pc on PTCBI such as: 0 mm, 3mm and 40 mm. The results showed that the increased the boundary length, the higher the photoanodic current density for thiol oxidation. The domain interface of the heterojunction would promote the oxidation rate of thiol by having large accumulation of holes in the H₂Pc side.