[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

[7a-PB3-1] Extremely-thin-body strained GOI pMOSFETs fabricated by thinning Ge condensation GOI through plasma oxidation

〇(D)Wukang Kim¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

Keywords:Ge condensation, ETB GOI pMOSFET, Compressive strain

Ge has been considered as one of the most promising next generation CMOS channel materials, because the fundamental limitation of further scaling of Si MOSFETs is predicted in the near future. Moreover, ETB (extremely-thin-body) GOI (Ge-on-insulator) less than 10 nm is crucial as the geometry for suppressing short channel effects and lowering leakage currents. In addition, compressive strain application to ETB GOI layers can enhance pMOSFET performance. Among several GOI fabrication methods, we have established the new Ge condensation method to form compressively strained GOI layers. However, ETB GOI pMOSFETs with high compressive strain has not been realized yet. In this study, strained GOI layers realized by the Ge condensation are thinned by ECR plasma oxidation. The operation of ETB strained GOI pMOSFETs with Ge thickness of 4.5 nm is demonstrated.