[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

[7a-PB3-5] Compact model of FeFET taking account the thermal flip of multi-domain polarization

〇Hidehiro Asai¹, Koichi Fukuda¹, Mitsue Takahashi¹, Shigeki Sakai¹ (1.AIST)

Keywords:FeFET, Compact model, Multi-domain structure

In this study, we have developed a compact model of FeFET taking account multi-domain structures in a ferroelectric layer and thermal flip of their polarities. Our compact model reproduces well the logarismic dependence of threshold voltage on the pulse width reported in the experiments.