[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

[7a-PB3-6] Surface activated bonding of LiNbO₃ wafer and SiO₂ wafer with low-temperature heat-treatment

〇Ryo Takigawa¹, Eiji Higurashi^2,3, Tanemasa Asano¹ (1.Kyushu Univ., 2.AIST, 3.The Univ. of Tokyo)

Keywords:LNOI/Si, Surface activated low-temperature bonding