[7a-PB3-1~9] 13.5 Semiconductor devices and related technologies

[7a-PB3-8] Analysis of soft errors for FinFET technology based on the multiple sensitive volume model using PHITS code

〇Shinichiro Abe¹, Tatsuhiko Sato¹, Takashi Kato², Hideya Matsuyama² (1.JAEA, 2.Socionext Inc.)

Keywords:Radiation, Soft error, Single event effect

Radiation-induced charges in semiconductor device cause temporary and non-destructive faults (the so-called soft errors) in microelectronic devices. The model which estimates charges collected in the storage node of a memory element quickly and accurately is necessary to evaluate soft error rate by simulation. In this study, we construct the multiple sensitive volume model to estimate collected charge for FinFET.