[7p-A201-1~10] Frontier of the research in dislocations

[7p-A201-10] Expansion behavior of basal plane dislocation on 4H-SiC A-plane by electron beam irradiation

〇Yukari Ishikawa^1,2, Masaki Sudo², Yong-Zhao Yao¹, Yoshihiro Sugawara¹, Masashi Kato² (1.JFCC, 2.Nagoya Inst. Tech.)

Keywords:basal plane dislocation, expansion, CL

Expanded basal plane dislocation (BPD) causes forward degradation. In order to understand BPD expansion mechanism, we observed the dissociated BPD on A-plane 4H-SiC under electron beam irradiation by CL mapping. The excitation configurations, which were impossible on C-plane, were possible on A-plane observation. We observed BPD expansions under several excitation configurations and found that its behavior varied with excited configuration. In addition, electron beam irradiation at the outside of dissociated BPD expand it. Details will be reported on site.