[7p-A201-1~10] Frontier of the research in dislocations

[7p-A201-8] Characterization and control of dislocations in 4H-SiC

〇Hidekazu Tsuchida¹, Isaho Kamata¹, Ryohei Tanuma¹, Jason Paul Hadorn¹, Masahiro Nagano¹ (1.CRIEPI)

Keywords:SiC, dislocation, epitaxy

In the development of high-speed, large-diameter, high-quality 4H-SiC bulk and epitaxial growth techniques toward wide-ranging applications of SiC power devices, recognition and imaging of dislocations swiftly and accurately may play an important role. This paper introduces our recent achievements in detecting and discriminating dislocations in 4H-SiC by synchrotron X-ray topography, photoluminescence imaging, optical second-harmonic generation (SHG) imaging and transmission electron microscopy and in the utilization of the techniques for controlling dislocations in SiC crystals.