[7p-A202-1~15] 6.3 Oxide electronics

△ [7p-A202-15] Electrolyte-gating-induced insulator-to-superconductor transition in electron-doped high-T_c cuprate superconductor La_2-xCe_xCuO₄

〇(M2)Hideki Matsuoka¹, Masaki Nakano¹, Masaki Uchida¹, Masashi Kawasaki^1,2, Yoshihiro Iwasa^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:cuprate, superconductivity, electrolyte gating

The electrolyte gating technique, which uses an electrolyte as a gate dielectric layer in the FET structure, enables us to control carriers enough to change physical property of cuprates. We applied this technique to La_2-xCe_xCuO₄, one of electron-doped cuprate superconductors, and realized gate-induced insulator-to-superconductor transitions which will be discussed in the presentation.