[7p-A202-1~15] 6.3 Oxide electronics

[7p-A202-14] Steep-slope transistors based on VO₂/atomically thin semiconductor heterostructures

〇Mahito Yamamoto¹, Teruo Kanki¹, Azusa Hattori¹, Ryo Nouchi², Takashi Taniguchi³, Kenji Watanabe³, Keiji Ueno⁴, Hidekazu Tanaka¹ (1.Osaka Univ., 2.Osaka Pref. Univ., 3.NIMS, 4.Saitama Univ.)

Keywords:correlated oxides, vanadium dioxides, atomically thin semiconductors

Due to the nature of the strongly correlated electrons, VO₂ exhibits ultrafast and abrupt metal-insulator transition under external stimuli, showing great promise as a novel transistor channel. Here we demonstrate thermally-induced abrupt switching in transistors based on heterostructures of VO₂ and atomically thin semiconductors.