[7p-A204-1~14] 【CS.7】6.1 & 13.3 & 13.5 Code-sharing session

[7p-A204-6] Evaluation of electrical properties of SrTa₂O₆ high-k thin films deposited by rf magnetron sputtering and their surface roughness control

Takanori Takahashi¹, Takeshi Hoga¹, Kanji Yasui², Uraoka Yukiharu³, 〇Kiyoshi Uchiyama¹ (1.NIT, Tsuruoka, 2.Nagaoka Univ. Tech., 3.NAIST)

Keywords:high-k materials, gate insulator, thin film transistor (TFT)

In this paper, we report the fabrications and their electric properties of high-k SrTa₂O₆ oxide thin films which are applicable as a gate insulator of thin film transistors (TFTs). In addtion, we also report the surface roughness control of STA thin films, which affects the mobility of the TFTs.