Size control of InGaN/GaN nanostructures by digital wet etching using ozone water oxidation

Kohei Ogawa; Shun Ishijima; Yusuke Namae; Akihiro Matsuoka; Yuki Ooe; Yusei Kawasaki; Akihiko Kikuchi

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[7p-A301-1~20] 15.4 III-V-group nitride crystals

Thu. Sep 7, 2017 1:15 PM - 6:45 PM A301 (Main Hall)

Ryuji Katayama(Osaka Univ.), Mitsuru Funato(Kyoto Univ.), Hiroto Sekiguchi(Toyohashi University of Technology)

6:00 PM - 6:15 PM

[7p-A301-18] Size control of InGaN/GaN nanostructures by digital wet etching using ozone water oxidation

〇Kohei Ogawa¹, Shun Ishijima¹, Yusuke Namae¹, Akihiro Matsuoka¹, Yuki Ooe¹, Yusei Kawasaki¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

Keywords:Gallium nitride, Nanostructure, Etching

We controlled the size of InGaN/GaN single nanopillar and nanopillar array structures using a digital wet etching method combining surface oxide film formation by saturated ozone water (SOW) treatment and oxide film etching with buffered hydrofluoric acid (BOE).