[7p-A402-1~6] 8.4 Plasma etching

[7p-A402-5] Study of residual gas suppression for etching rate stabilization in the dry etching

〇Yukihiro Tsuji¹, Tetsuya Hattori¹, Masaki Yanagisawa¹, Hajime Shoji¹ (1.Sumitomo Electric Industries, Ltd.)

Keywords:semiconductor, dry etching, mass spectrometry

For dry etching of compound semiconductor, ICP-RIE with chlorine based-gas has been used. Recently, dry etching technology requires high precision microfabrication. Therefore, the etching rate must be stabilized. The etching rate variation is generally about ± 5% between batches, conventionally. In this study, a mass spectrometer was attached to the RIE. Then the residual gas component is analyzed and residual gas component and its partial pressure were analyzed. Finally, we investigated the residual gas dependence of the etch rate variation.