[7p-A411-1~17] 1.5 Instrumentation, measurement and Metrology

△ [7p-A411-3] Influence of trap charges on surface temperature measurement of Si by KFM

〇(M1)Akito Oka¹, Yuuhei Suzuki¹, Kawai Taketo¹, Mani Navaneethan¹, Tatsuoka Hirokazu¹, Faiz Salleh², Ikeda Hiroya¹ (1.Shizuoka Univ., 2.Malaya Univ.)

Keywords:KFM, Measurement of Fermi energy, Si

We aim to establish a method to evaluate the temperature from the surface potential by measuring the temperature dependence of the surface potential of Si using a surface potential microscope (KFM). For that purpose, measurement was carried out on Si wafers of different impurity concentrations with KFM and thermocouple while changing the temperature. As a result, the temperature coefficient of the Fermi energy of Si was larger than the theoretical value due to the influence of the trap charge at the interface.