The 78th JSAP Autumn Meeting, 2017

Presentation information

Oral presentation

13 Semiconductors » 13.9 Optical properties and light-emitting devices

[7p-A414-1~17] 13.9 Optical properties and light-emitting devices

Thu. Sep 7, 2017 1:15 PM - 5:45 PM A414 (414)

Haruki Fukada(Kanazawa Inst. of Tech.), Yasushi Nanai(Aoyama Univ.)

4:45 PM - 5:00 PM

[7p-A414-14] Broadband-sensitive upconversion emission of Er3+, Ni2+-co-doped garnets

Yasuhiko Takeda1, Luitel Hom Nath1, Shintaro Mizuno1 (1.Toyota Central R&D Labs.)

Keywords:upconversion, rare earth, sensitization

We designed a new material to fabricate Er3+, Ni2+-co-doped transparent ceramics exhibiting broadband-sensitive upconversion emission. The host material must be of a cubic structure like garnets for transparency. Among the octahedron sites and tetrahedron sites in a garnet, the Ni2+ dopants are required to occupy the former for efficient sensitization. We selected Gd3Ga5O12 as the host material to fulfill these two requisites. The synthesized Gd3Ga5O12:Er3+,Ni2+ powder samples exhibited upconversion emission at 0.98 um under 1.1-1.7 um excitation, like previously developed La(Ga0.5Sc0.5)O3:Er3+,Ni2+.