The 78th JSAP Autumn Meeting, 2017

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Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[7p-C11-1~21] 17.3 Layered materials

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C11 (Office 1)

Masaki Tanemura(Nagoya Inst. of Tech.), Yasuhide Ohno(Tokushima univ)

6:15 PM - 6:30 PM

[7p-C11-17] Heavily-doped SOI as a gate electrode for TMDC-FET by deterministic transfer method

〇(M2)Ryo Ikoma1, Takamasa Kawanago1 (1.Tokyo Tech.)

Keywords:layerd semiconductor, TMDC