[7p-C11-1~21] 17.3 Layered materials

△ [7p-C11-19] Band to band tunneling in WSe₂/SnS₂ hetero-structure

〇Shunyou Ka¹, Nan Fang¹, Keigo Nakamura¹, Keiji Ueno², Kousuke Nagashio^1,3 (1.Tokyo Univ., 2.Saitama Univ., 3.PRESTO-JST)

Keywords:two-dimensional materials, TFET

The band-to-band tunnel field effect transistors (TFETs), which can achieve the reduction of SS to 60mV/dec or less, attract great attention to researchers because the low power consumption by low voltage driving. In the two-dimensional layered hetero-structure, the tunnel barrier thickness can be reduced to an extreme limit and tunneling current can be improved. In this study, we attempted to form p+/n by gate control with dual gate structure in p-WSe₂/n-SnS₂ TFET and tried to get p+-WSe₂ by ozone oxidation of WSe₂.