Fabrication of hybrid SAM/HfO<sub>x</sub> gate dielectrics in MoS<sub>2</sub> FET

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

Thu. Sep 7, 2017 1:45 PM - 7:30 PM C11 (Office 1)

Masaki Tanemura(Nagoya Inst. of Tech.), Yasuhide Ohno(Tokushima univ)

7:00 PM - 7:15 PM

〇(B)Tomoaki Oba¹, Ryo Ikoma¹, Takamasa Kawanago¹ (1.Tokyo Tech)

Keywords:Layered semiconductor, MoS2