[7p-C16-1~18] 17.2 Graphene

[7p-C16-16] Strain evaluation of graphene grown on 3C-SiC(111) by Raman scattering spectroscopy

〇Yoshiaki Sekine¹, Kumakura Kazuhide¹, Hibino Hiroki^1,2 (1.NTT Basic Research Labs., 2.Kwansei Gakuin Univ.)

Keywords:graphene, SiC, polytype

Among many SiC polytypes, graphene grown on 3C-SiC shows a high monolayer coverage, so it is suitable for device applications. However, as for graphene/3C-SiC, basic properties such as strain have not been intensively studied. Here, we present strain of graphene on 3C-SiC estimated by Raman scattering spectroscopy. We found that strain on graphene/3C-SIC is relaxed compared with graphene/4H-SiC. This strain relaxation agrees well with the partial relaxation of 3C-SiC grown on 4H-SiC, which is caused by lattice mismatch between 3C-SiC and 4H-SiC. These results are useful for future device applications.