[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-12] Evaluation of defects in EFG-grown β-Ga₂O₃ crystals (2) - Plate-like nano-voids and twins -

〇Osamu Ueda¹, Noriaki Ikenaga¹, Tomoya Moribayashi², Kimiyoshi Koshi³, Kazuyuki Iizuka³, Akito Kuramata³, Makoto Kasu² (1.Kanazawa Inst. Tech., 2.Saga Univ., 3.Tamura Corp.)

Keywords:gallium oxide, void, twin

We report the results of evaluation of plate-like nano-voids and twins in EFG-grown β-Ga2O3 crystals by chemical etching, SEM, and TEM. First, we have observed deep grooves corresponding to the center of etch-pits revealed on the (010) plane by hot phosphoric acid. The grooves were found to be plate-like nano-voids by TEM. For twins, TEM evaluation has confirmed that the twin boundary is (100) plane, and that ribbon-like twin-lamellae are also formed in the crystal. Based on these results, we discuss generation mechanisms of the two types of defects.