[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-11] Homoepitaxial Growth on 2-inch (001) β-Ga₂O₃ Substrates by Halide Vapor Phase Epitaxy

〇Daiki Wakimoto^1,2, Quang Tu Thieu², Kohei Sasaki^1,2, Ken Goto^1,2, Keita Konishi³, Hisashi Murakami³, Akito Kuramata^1,2, Yoshinao Kumagai³, Shigenobu Yamakoshi^1,2 (1.Tamura Corp., 2.Novel Crystal Tech., 3.Tokyo Univ. of Agri. and Tech.)

Keywords:beta-Ga2O3, Halide Vapor Phase Epitaxy

We report the success of conducting homoepitaxial thick film growth on conductivity controlled for the first time on 2-inch (001) β-Ga₂O₃ substrate using halide vapor phase epitaxy method.