The 78th JSAP Autumn Meeting, 2017

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Takayoshi Oshima(Saga Univ.), Tomoki Abe(Tottori Univ.)

2:00 PM - 2:15 PM

[7p-C17-2] Fabrication of α-Ga2O3 thin films with low surface roughness for device applications

〇Takayuki Uchida1, Riena Jinno1, Shu Takemoto1, Kentaro Kaneko1, Shizuo Fujita1 (1.Kyoto Univ.)

Keywords:Ga2O3, power device, Mist CVD