The 78th JSAP Autumn Meeting, 2017

Presentation information

Print

Oral presentation

21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[7p-C17-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 7, 2017 1:45 PM - 6:00 PM C17 (Training Room 2)

Takayoshi Oshima(Saga Univ.), Tomoki Abe(Tottori Univ.)

4:00 PM - 4:15 PM

△ [7p-C17-9] Thermodynamic Analysis on Molecular Beam Epitaxy of Ga2O3

〇Yohei Sawada1, Natsuki Ueda2, Keita Konishi1, Yoshinao Kumagai1,3 (1.Dept. of Appl. Chem., TUAT, 2.Fac. of Tech., TUAT, 3.TUAT GIR)

Keywords:gallium oxide, crystal growth, thermodynamic analysis

We report thermodynamic analysis on gallium oxide growth by MBE method.