[7p-C18-1~11] Film Formation and Low Temperature of IV Element Semiconductor

[7p-C18-2] Solid Phase Crystallization and Electrical Properties of CVD-Silicon Films

〇Ichiro Mizushima¹ (1.Toshiba Electronic Devices & Storage Corporation)

Keywords:solid phase crystallization, solid phase epitaxy, polycrystalline silicon

SOI structure and large-grain polycrystalline silicon can be fabricated using solid phase crystallization of CVD silicon thin-films. Recently the size of the devices has shrunk to nm-order, thus the device characteristics clearly reflect the crystallinity of silicon films. In this presentation, solid-phase crystallization of silicon films and electrical characteristics will be presented for the future development of crystallization-technique of group IV materials.