[7p-C18-1~11] Film Formation and Low Temperature of IV Element Semiconductor

[7p-C18-3] Kinetics and Location-Control of Crystallite Nucleation in Polycrystalline Si Thin Films

〇Hideya Kumomi¹ (1.Tokyo Tech MCES)

Keywords:Polycrystalline Si thin-film transistor, location control, crystallite nucleation

Once upon a time, methods of controlling locations of crystallite nucleation in formation of polycrystalline Si (poly-Si) thin films had been developed to demonstrate a TFT whose whole channel is in a single crystalline grain without any grain boundaries inside, and whose performance could be close to that of single-crystalline Si transistors. Important clues to fundamental issues in kinetic processes of crystallite nucleation had also been obtained in the research of developing the method. Both issues of the method and kinetics will be reviewed in this talk.